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 KSB798 PNP Epitaxial Silicon Transistor
July 2005
KSB798
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier
* Collector Current : IC = -1A * Collector Power Dissipation : PC = 2W
Marking
79 PY
1
8 WW
Weekly code Year code hFE grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) *
Ta = 25C unless otherwise noted
Parameter
Ratings
-30 -25 -5 -1.0 -1.5 2.0 150 -55 ~ 150
Units
V V V A A W C C
Collector Power Dissipation Junction Temperature Storage Temperature
* PW 10ms, Duty cycle 50%
Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) fT Cob
a=
25C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition
IC = -100A, IE = 0 IC = -1mA, IB = 0 IE = -100A, IC = 0 VCB = -30V, IE = 0 VEB = -5V, IC = 0 VCE = -1V, IC = -0.1A VCE = -1V, IC = -1.0A IC = -1.0A, IB = -0.1A IC = -1.0A, IB = -0.1A VCE = -6V, IC = -10mA VCE = -6V, IC = -10mA VCB = -6V, IE = 0, f = 1MHz
Min.
-30 -25 -5
Typ.
Max.
Units
V V V
-0.1 -0.1 90 50 400 -0.4 -1.2 -0.6 110 18 -0.7
A A
V V V MHz pF
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSB798 Rev. B1
KSB798 PNP Epitaxial Silicon Transistor
hFE Classification
Classification
hFE1
O
90 ~ 180
Y
135 ~ 270
G
200 ~ 400
Package Marking and Ordering Information
Device Marking
798
Device
KSB798
Package
SOT-89
Reel Size
13"
Tape Width
--
Quantity
4,000
KSB798 Rev. B1
2
www.fairchildsemi.com
KSB798 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
-1.0 -0.9
Figure 2. DC Current Gain
1000
VCE= -1V
IC[A], COLLECTOR CURRENT
-0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -1mA
hFE, DC CURRENT GAIN
-10
100
10
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
1 -10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
Figure 4. Collector Output Capacitance
100
IC = 10 IB
f = 1MHz IE=0
-1
VBE(sat)
Cob[pF], CAPACITANCE
10
-0.1
VCE(sat)
-0.01
1
-1
-10
-100
-1000
-1
-10
-100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Current Gain Bandwidth Product
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
VCE = -6V
Figure 6. Safe Operating Area
-10
1.TC=25 C 2.Single pulse
o
100
IC[A], COLLECTOR CURRENT
-1
0m 20 s
DC
-0.1
10
1
-0.01
10 100
-1
-10
-100
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
KSB798 Rev. B1
3
www.fairchildsemi.com
KSB798 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40
+0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
KSB798 Rev. B1
4
www.fairchildsemi.com
KSB798 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5 KSB798 Rev. B1
www.fairchildsemi.com


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